Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon
We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that t
