Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
We present vertical InAs/InGaAsSb/GaSb nanowire tunnel FETs (TFETs) on Si demonstrating subthreshold swing (S) of 32 mV/dec with ION = 4 µA/µm for IOFF = 1 nA/µm at VDS = 0.3V. The demonstrated drive currents is the highest reported for a TFET with S below 40 mV/dec resulting in a transconductance efficiency as high as 100 V-1. These results have been achieved by optimizing the source segment grow