Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
We present a detailed analysis of low-frequency noise (LFN) measurements in vertical III-V nanowire tunnel fieldeffect transistors (TFETs), which helps to understand the limiting factors of TFET operation. A comparison with LFN in vertical metal-oxide semiconductor field-effect transistors with the same channel material and gate oxide shows that the LFN in these TFETs is dominated by the gate oxid