Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping
Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-x Mnx As layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted su
