Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Vertical III-V nanowire MOSFETs show potential towards the ultimate transistor scaling. A high transconductance and current density are achieved based on the gate-all-around architecture. This work presents a high-frequency design of such devices, achieving more than 600 GHz cut-off frequencies (fT, fmax), at 20 nm gate length. Furthermore, capacitance design and scaling trends, supported by COMSO