The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfOx grown using plasma enhanced atomic layer deposition (PEALD)