Large-area homogeneous quasifree standing epitaxial graphene on SiC(0001): Electronic and structural characterization
The growth of epitaxial graphene on SiC has been identified as one of the most promising techniques to produce graphene for electronic applications. In this paper, we present a systematic study of the electronic and structural properties of large-area quasifree standing epitaxial monolayer graphene grown on top of the SiC(0001) surface. For this purpose, we combine the thermal treatment of SiC in