Electronic and structural analysis of Sb-induced GaAs(100)(2x4) and (2x8) surfaces
Electronic and structural properties of Sb-induced GaAs(100)(2x4) and (2x8) surfaces are studied by means of core-level and valence-band photoelectron spectroscopy utilizing synchrotron radiation and scanning tunneling microscopy. Combining these results and showing good consistency among them, we demonstrate that the Sb/GaAs(100)(2x4) surface is well compatible with the delta structural model, wh