InAs epitaxial lateral overgrowth of W masks
The conditions for successful epitaxial lateral overgrowth of W patterns by InAs using low-pressure metalorganic vapour phase epitaxy were studied. The substrates used were InAs (0 0 1) wafers and the range of growth temperatures between 500 and 600 degrees C. The selective growth was investigated as a function of the V/III-ratio on W-ring test structures and wires oriented in different directions