Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires : Implications for Crystal-Phase Device Design
Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of bot