Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate
We report on he growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H-2 carrier gas How rate in a CVD furnace and show that highly selected growth of twin supe
