Theory of electronic structure and transport in heterostructure nanowires
Today, semi-conductor nanowires can be grown with very high precision, using epitaxy. This allows for studies of new nanowire-based quantum devices, likely to be part of novel quantum technologies in the future. This thesis concerns nanostructures based on InAs nanowires. More specifically, it concerns the theoretical treatment of two types of nanowire-based structures: InAs/GaSb core-shell (and c
