Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy
GaAs and GaMnAs compounds grown by low temperature (LT) molecular beam epitaxy (MBE), are promising materials for fabricating novel devices. LT-GaAs has already been used in new devices, as it has subpicosecond carrier lifetimes, good carrier mobility and high dark resistivity. GaMnAs compounds are candidates for integrating ferromagnetic materials into semiconductor devices, as they can become fe