The VO2* defect in silicon
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally dis