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Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrate
