Low temperature deposition of silicon nitride using Si3Cl8
We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize af