Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads t
