Low and High Energy Ion Beams in Nanotechnology
In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. Surface topography and electrical modification has been characterised using Atomic Force Microscopy (AFM) and Scanning Capacitance