Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
Single and double quantum dot devices are realized in InGaAs/InP heterostructures by top gating technology with incorporated High-kappa HfO2 gate dielectric layers. At 300 mK, Coulomb blockade effects are observed in as-fabricated devices, and the charge states can be measured by the integrated quantum point contacts. The developed technology should stimulate the research on quantum devices made f
