Modelling Rapid Melt Growth of III-V Integration on Si
High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. But the question is, is it possible to obtain high quality III-V semiconductors on low cost silicon and still be able to manufacture it at large scale?
