Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to t