Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
We demonstrate a successful process scheme for the integration of a CMOS-compatible ferroelectric gate stack on a scaled vertical InAs nanowire gate-all-around MOSFET on silicon. The devices show promising device characteristics with nanosecond write time and large memory window of >1.5 V. In the current implementation, the device performance is mainly limited by access resistance, which is attrib