UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra
Metal-organic chemical vapour deposition growth of titanium oxide on moderately pre-oxidised Si(1 1 1) using the titanium(IV) isopropoxide precursor has been studied for two different growth modes, reaction-limited growth at 300 degrees C and flux-limited growth at 500 degrees C. The interfacial properties have been characterized by monitoring synchrotron radiation excited Si 2p photoemission spec
