Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $\mu \text{m}$ -thick drift layer, a low ON-resistance below