Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd2O3) on silicon (001) has been investigated. Gd2O3 was grown at low (250°C) and high (850°C) temperatures with different oxygen partial pressure as well as a temperature ramp up during growth. At low temperature, the cubic bixbyite type of crystal structure with space group Ia
