Wet Etching of Silicon Germanium Nanowires
The aim of this project is to understand the wet etching mechanism of SiGe at the nanoscale. We will use the etching of SiGe nanowires as a case study and we will optimize the etchant solution in order to achieve high selectivity over Si, preserve the shape of SiGe nanowire (isotropic etching) and control their diameter below the threshold of ten nanometers.