Heterostructures in one-dimensional nanowires
Chemical beam epitaxy has been used to grow III/V nanowires seeded from size selected Au aerosol particles. Both chemically uniform InAs wires as well as InAs wires containing one or several heterostructure interfaces were grown. The interfaces were characterized in a transmission electron microscope revealing atomically sharp interfaces and also that, barriers as thin as only 2-3 monolayers and u
