III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-stat
