Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation.