INVITED TALK for sub-area “Emissive, Micro‐LED, and Quantum‐Dot Display” : On the strive towards all-InGaN sub-2µm sized RGB microLEDs
III-Nitride based LEDs based on InGaN active layers on GaN work very well for the blue and green emitting LEDs. However, the large lattice mis-match between redemitting active layers, with at least 35% indium in the active layers, and the GaN substrate still limits the efficiencies obtained to very low values. Unfortunately, the approach to use GaAs based (GaAs/AlInGaP) devices for the red fails f
