High-k oxides on InAs 100 and 111B surfaces
Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).
