Realization of single and double axial InSb-GaSb heterostructure nanowires
Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions
