Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capaci