Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking
