A method for estimating defects in ferroelectric thin film MOSCAPs
We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated onsemiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas importantdevice parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurementscheme and the