(Opto)Electrical Characterization of III-V Semiconductor Nanowires Using SPM Techniques
This study presents structural and electrical properties of individual, upright standing III-V semiconductor nanowires obtained by scanning probe microscopy (SPM). The work is divided in two major parts. First, we report on optoelectrical characterization of individual InP nanowires in their free standing geometry utilizing scanning tunneling microscopy (STM). We present measured current-voltage (
