Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability to reach a point subthreshold swing of 35 mV/decade at VDS = 0.05 V. Furthermore, the impact of drain, channel and source diameter scaling on the subthreshold swing and currents are studied. Impact of gate-overlap is more evident