Intrinsic Performance of InAs Nanowire Capacitors
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small