Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
The effects of substrate misorientation angle direction and degree on the structural properties of N-polar GaN grown by a novel multi-step temperature epitaxial approach using hot-wall metal–organic chemical vapor deposition (MOCVD) on 4H-SiC (0001̄) substrates is investigated. The surface morphology and X-ray diffraction (XRD) rocking curves (RCs) for both symmetric and asymmetric Bragg peaks of