Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes : A CNT-gated CNT-FET
We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate th