High mobility ReSe2 field effect transistors : Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration
2D transition metal dichalcogenides are promising in various electronics and optoelectronics applications and have gained popularity owing to their carrier transport and strong light-matter interactions. To fully realize their potential in field-effect transistors (FETs) and photodetectors, high mobility and high responsivity are imperative. Here, we demonstrate the highest mobility of ∼166 cm2 V-
