Direct nucleation, morphology and compositional tuning of InAs1-xSb x nanowires on InAs (111) B substrates
III-V ternary nanowires are interesting due to the possibility of modulating their physical and material properties by tuning their material composition. Amongst them InAs1-xSb x nanowires are good candidates for applications such as Infrared detectors. However, this material has not been grown directly from substrates, in a large range of material compositions. Since the properties of ternaries a