Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime
Using the second-order perturbation theory we have calculated the scattering assisted gain spectra in GaAs/AlGaAs superlattice under a strong applied electric field in the Wannier-Stark-Ladder (WSL) regime. Nonequilibrium distribution function of quasi-two-dimensional carriers localized in each WSL level and indirect optical transitions between neighboring WSL levels accompanied by the emission or
